Comparison of High-Temperature Electrcial Characterizations of Pulsed-Laser Deposited AIN on 6H- and 4H-SiC from 25 to 450°C

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Periodical:

Materials Science Forum (Volumes 338-342)

Edited by:

Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer

Pages:

1137-1140

DOI:

10.4028/www.scientific.net/MSF.338-342.1137

Citation:

A. J. Lelis et al., "Comparison of High-Temperature Electrcial Characterizations of Pulsed-Laser Deposited AIN on 6H- and 4H-SiC from 25 to 450°C", Materials Science Forum, Vols. 338-342, pp. 1137-1140, 2000

Online since:

May 2000

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