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Atomic-Scale Engineering of the SiC-SiO₂ Interface
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Comparison of High-Temperature Electrcial Characterizations of Pulsed-Laser Deposited AIN on 6H- and 4H-SiC from 25 to 450°C
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Molding-based Thin Film Patterning Techniques for SiC Surface Micromachining
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Bulk Micromachining of Polycrystalline SiC Using Si Molds Fabricated by Deep Reactive Ion Etching
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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Comparison of High-Temperature Electrcial...

Comparison of High-Temperature Electrcial Characterizations of Pulsed-Laser Deposited AIN on 6H- and 4H-SiC from 25 to 450°C

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1137-1140

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1137

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Online since:

May 2000

Authors:

Aivars J. Lelis, Charles Scozzie, F. Barry McLean, Bruce Geil, R.D. Vispute, T. Venkatesan

Keywords:

Aluminum Nitride (AlN), Gate Dielectrics, Leakage Mechanism, Passivation Films, Pulsed Laser Deposition (PLD), Schottky Emission

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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