Effects of Steam Annealing on Electrical Characteristics of 3C-SiC Metal-Oxide-Semiconductor Structures

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Periodical:

Materials Science Forum (Volumes 338-342)

Edited by:

Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer

Pages:

1129-1132

DOI:

10.4028/www.scientific.net/MSF.338-342.1129

Citation:

M. Yoshikawa et al., "Effects of Steam Annealing on Electrical Characteristics of 3C-SiC Metal-Oxide-Semiconductor Structures", Materials Science Forum, Vols. 338-342, pp. 1129-1132, 2000

Online since:

May 2000

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$35.00

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