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Paper Titles
The Effect of Si:C Source Ratio on SiO2/SiC Interface State Density for Nitrogen Doped 4H and 6H-SiC
p.1097
Channel Doped SiC-MOSFETs
p.1101
Anisotropy of Inversion Channel Mobility in 4H- and 6H-SiC MOSFETs on (11-20) Face
p.1105
MOSFET Performance of 4H-, 6H-, and 15R-SiC Processed by Dry and Wet Oxidation
p.1109
Interface Trap Profiles Near the Band Edges in 6H-SiC MOSFETs
p.1113
Characterization of SiC MOS Structures using Conductance Spectroscopy and Capacitance Voltage Analysis
p.1117
Mobility in 6H-SiC n-Channel MOSFETs
p.1121
Effects of Oxidation Conditions on the Concentration of Carbon Dangling Bonds in Oxidized 6H-SiC
p.1125
Effects of Steam Annealing on Electrical Characteristics of 3C-SiC Metal-Oxide-Semiconductor Structures
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Interface Trap Profiles Near the Band Edges in 6H-SiC MOSFETs

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1113-1116

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1113

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Online since:

May 2000

Authors:

N.S. Saks, S.S. Mani, Anant K. Agarwal

Keywords:

Capacitance-Voltage Measurement, Interface States (or Traps), Interface Trap Profiles, MOS

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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