Interface Trap Profiles Near the Band Edges in 6H-SiC MOSFETs

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Periodical:

Materials Science Forum (Volumes 338-342)

Edited by:

Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer

Pages:

1113-1116

DOI:

10.4028/www.scientific.net/MSF.338-342.1113

Citation:

N.S. Saks et al., "Interface Trap Profiles Near the Band Edges in 6H-SiC MOSFETs", Materials Science Forum, Vols. 338-342, pp. 1113-1116, 2000

Online since:

May 2000

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Price:

$35.00

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