Paper Titles

Ozone Treament of SiC for Improved Performance of Gas Sensitive Schottky Diodes
p.1085

Reliability and Degradation of Metal-Oxide-Semiconductor Capacitors on 4H- and 6H-Silicon Carbide
p.1089

SiC Devices with ONO Stacked Dielectrics
p.1093

The Effect of Si:C Source Ratio on SiO₂/SiC Interface State Density for Nitrogen Doped 4H and 6H-SiC
p.1097

Channel Doped SiC-MOSFETs
p.1101

Anisotropy of Inversion Channel Mobility in 4H- and 6H-SiC MOSFETs on (11-20) Face
p.1105

MOSFET Performance of 4H-, 6H-, and 15R-SiC Processed by Dry and Wet Oxidation
p.1109

Interface Trap Profiles Near the Band Edges in 6H-SiC MOSFETs
p.1113

Characterization of SiC MOS Structures using Conductance Spectroscopy and Capacitance Voltage Analysis
p.1117

HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Channel Doped SiC-MOSFETs

Channel Doped SiC-MOSFETs

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials - 1999

Info:

Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1101-1104

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1101

Citation:

Cite this paper

Online since:

May 2000

Authors:

Shinji Ogino, Tadaaki Oikawa, Katsunori Ueno

Keywords:

Channel Mobility, Interface, Ion Implantation, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET)

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2000 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: