Paper Titles

Process Dependence of Inversion Layer Mobility in 4H-SiC Devices
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Controlled Thermal Oxidation of Sacrificial Silicon on 4H-SiC Epilayer
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Ozone Treament of SiC for Improved Performance of Gas Sensitive Schottky Diodes
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Reliability and Degradation of Metal-Oxide-Semiconductor Capacitors on 4H- and 6H-Silicon Carbide
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SiC Devices with ONO Stacked Dielectrics
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The Effect of Si:C Source Ratio on SiO₂/SiC Interface State Density for Nitrogen Doped 4H and 6H-SiC
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Channel Doped SiC-MOSFETs
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Anisotropy of Inversion Channel Mobility in 4H- and 6H-SiC MOSFETs on (11-20) Face
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MOSFET Performance of 4H-, 6H-, and 15R-SiC Processed by Dry and Wet Oxidation
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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342SiC Devices with ONO Stacked Dielectrics

SiC Devices with ONO Stacked Dielectrics

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1093-1096

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1093

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Online since:

May 2000

Authors:

Lori A. Lipkin, John W. Palmour

Keywords:

Alternate Dielectric, Interface States (or Traps), Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), Mobility, ONO Dielectric, Reliability

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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