Paper Titles

Anomalously High Density of Interface States Near the Conduction Band in SiO₂/4H-SiC MOS Devices
p.1069

Effect of Post-oxidation-annealing in Hydrogen on SiO₂/4H-SiC Interface
p.1073

Process Dependence of Inversion Layer Mobility in 4H-SiC Devices
p.1077

Controlled Thermal Oxidation of Sacrificial Silicon on 4H-SiC Epilayer
p.1081

Ozone Treament of SiC for Improved Performance of Gas Sensitive Schottky Diodes
p.1085

Reliability and Degradation of Metal-Oxide-Semiconductor Capacitors on 4H- and 6H-Silicon Carbide
p.1089

SiC Devices with ONO Stacked Dielectrics
p.1093

The Effect of Si:C Source Ratio on SiO₂/SiC Interface State Density for Nitrogen Doped 4H and 6H-SiC
p.1097

Channel Doped SiC-MOSFETs
p.1101

HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Ozone Treament of SiC for Improved Performance of...

Ozone Treament of SiC for Improved Performance of Gas Sensitive Schottky Diodes

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials - 1999

Info:

Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1085-1088

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1085

Citation:

Cite this paper

Online since:

May 2000

Authors:

S. Zangooie, H. Arwin, Ingemar Lundström, Anita Lloyd Spetz

Keywords:

Gas Sensor, Ozone Cleaning, SiC Schottky Diodes, Spectroscopic Ellipsometry (SE), Thin Oxide

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2000 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: