Anomalously High Density of Interface States Near the Conduction Band in SiO2/4H-SiC MOS Devices

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Periodical:

Materials Science Forum (Volumes 338-342)

Edited by:

Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer

Pages:

1069-1072

DOI:

10.4028/www.scientific.net/MSF.338-342.1069

Citation:

M. K. Das et al., "Anomalously High Density of Interface States Near the Conduction Band in SiO2/4H-SiC MOS Devices", Materials Science Forum, Vols. 338-342, pp. 1069-1072, 2000

Online since:

May 2000

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$35.00

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