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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Anomalously High Density of Interface States Near...

Anomalously High Density of Interface States Near the Conduction Band in SiO₂/4H-SiC MOS Devices

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1069-1072

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1069

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Online since:

May 2000

Authors:

Mrinal K. Das, Benjamin S. Um, James A. Cooper

Keywords:

Interface States (or Traps), Metal-Oxide-Semiconductor (MOS) Devices, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), Mobility

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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