Electrically Active Traps at the 4H-SiC/SiO2 Interface Responsible for the Limitation of the Channel Mobility

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Periodical:

Materials Science Forum (Volumes 338-342)

Edited by:

Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer

Pages:

1065-1068

Citation:

M. Bassler et al., "Electrically Active Traps at the 4H-SiC/SiO2 Interface Responsible for the Limitation of the Channel Mobility", Materials Science Forum, Vols. 338-342, pp. 1065-1068, 2000

Online since:

May 2000

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$38.00

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