Paper Titles

Dry Etching and Metallization Schemes in a GaN/SiC Heterojunction Device Process
p.1049

Demonstration of Deep (80μm) RIE Etching of SiC for MEMS and MMIC Applications
p.1053

Reactive Ion Etching in CF₄ / O₂ Gas Mixtures for Fabricating SiC Devices
p.1057

Electrochemical C-V Profiling of P-type 6H-SiC
p.1061

Electrically Active Traps at the 4H-SiC/SiO₂ Interface Responsible for the Limitation of the Channel Mobility
p.1065

Anomalously High Density of Interface States Near the Conduction Band in SiO₂/4H-SiC MOS Devices
p.1069

Effect of Post-oxidation-annealing in Hydrogen on SiO₂/4H-SiC Interface
p.1073

Process Dependence of Inversion Layer Mobility in 4H-SiC Devices
p.1077

Controlled Thermal Oxidation of Sacrificial Silicon on 4H-SiC Epilayer
p.1081

HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Electrically Active Traps at the 4H-SiC/SiO2...

Electrically Active Traps at the 4H-SiC/SiO₂ Interface Responsible for the Limitation of the Channel Mobility

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials - 1999

Info:

Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1065-1068

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1065

Citation:

Cite this paper

Online since:

May 2000

Authors:

M. Bassler, Valeri V. Afanas'ev, Gerhard Pensl, M. Schulz

Keywords:

4H-SiC, 6H-SiC, Admittance Spectroscopy, MOS, Near-interface Traps

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2000 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: