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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Reactive Ion Etching in CF4 / O2 Gas Mixtures for...

Reactive Ion Etching in CF₄ / O₂ Gas Mixtures for Fabricating SiC Devices

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1057-1060

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1057

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Online since:

May 2000

Authors:

Masayuki Imaizumi, Yoichiro Tarui, Hiroshi Sugimoto, J. Tanimura, Tetsuya Takami, Tatsuo Ozeki

Keywords:

Accumulation Mode, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), Reactive Ion Etching, RIE Rate, Surface Roughness (SR), X-Ray Photoelectron Spectroscopy (XPS)

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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