Paper Titles

Fermi Level Pinning and Schottky Barrier Characteristics on Reactively Ion Etched 4H-SiC
p.1029

Real-Time Assessment of Overlayer Removal on 4H-SiC Surfaces: Techniques and Relevance to Contact Formation
p.1033

Pre-Growth Treatment of 4H-SiC Substrates by Hydrogen Etching at Low Pressure
p.1037

SiC In-Situ Pre-Growth Etching: A Thermodynamic Study
p.1041

The Effect of In Situ Surface Treatment on the Growth of 3C-SiC Thin Films on 6H-SiC Substrate - An X-ray Triple Crystal Diffractometry and Synchrotron X-ray Topography Study
p.1045

Dry Etching and Metallization Schemes in a GaN/SiC Heterojunction Device Process
p.1049

Demonstration of Deep (80μm) RIE Etching of SiC for MEMS and MMIC Applications
p.1053

Reactive Ion Etching in CF₄ / O₂ Gas Mixtures for Fabricating SiC Devices
p.1057

Electrochemical C-V Profiling of P-type 6H-SiC
p.1061

HomeMaterials Science ForumMaterials Science Forum Vols. 338-342The Effect of In Situ Surface Treatment on the...

The Effect of In Situ Surface Treatment on the Growth of 3C-SiC Thin Films on 6H-SiC Substrate - An X-ray Triple Crystal Diffractometry and Synchrotron X-ray Topography Study

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials - 1999

Info:

Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1045-1048

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1045

Citation:

Cite this paper

Online since:

May 2000

Authors:

J. Chaudhuri, J.T. George, J.H. Edgar, Zhi Yong Xie, Z. Rek

Keywords:

3C-SiC/6H-SiC, In Situ Surface Treatment, Synchrotron X-Ray Topography, X-Ray Diffraction (XRD)

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2000 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: