Paper Titles

Real-Time Assessment of Overlayer Removal on 4H-SiC Surfaces: Techniques and Relevance to Contact Formation
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Pre-Growth Treatment of 4H-SiC Substrates by Hydrogen Etching at Low Pressure
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SiC In-Situ Pre-Growth Etching: A Thermodynamic Study
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The Effect of In Situ Surface Treatment on the Growth of 3C-SiC Thin Films on 6H-SiC Substrate - An X-ray Triple Crystal Diffractometry and Synchrotron X-ray Topography Study
p.1045

Dry Etching and Metallization Schemes in a GaN/SiC Heterojunction Device Process
p.1049

Demonstration of Deep (80μm) RIE Etching of SiC for MEMS and MMIC Applications
p.1053

Reactive Ion Etching in CF₄ / O₂ Gas Mixtures for Fabricating SiC Devices
p.1057

Electrochemical C-V Profiling of P-type 6H-SiC
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Electrically Active Traps at the 4H-SiC/SiO₂ Interface Responsible for the Limitation of the Channel Mobility
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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Dry Etching and Metallization Schemes in a GaN/SiC...

Dry Etching and Metallization Schemes in a GaN/SiC Heterojunction Device Process

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1049-1052

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1049

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Online since:

May 2000

Authors:

Erik Danielsson, Carl Mikael Zetterling, Mikael Östling, Sang Kwon Lee, Kevin J. Linthicum, D.B. Thomson, O.H. Nam, Robert F. Davis

Keywords:

Gas Switching, Herojunction Bipolar Transistor (HBT), ICP, RIE

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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