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Anomalously High Density of Interface States Near the Conduction Band in SiO₂/4H-SiC MOS Devices
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Effect of Post-oxidation-annealing in Hydrogen on SiO₂/4H-SiC Interface
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Process Dependence of Inversion Layer Mobility in 4H-SiC Devices
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Controlled Thermal Oxidation of Sacrificial Silicon on 4H-SiC Epilayer
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Ozone Treament of SiC for Improved Performance of Gas Sensitive Schottky Diodes
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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Effect of Post-oxidation-annealing in Hydrogen on...

Effect of Post-oxidation-annealing in Hydrogen on SiO₂/4H-SiC Interface

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1073-1076

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1073

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Online since:

May 2000

Authors:

Seiji Suzuki, Kenji Fukuda, Hideyo Okushi, Kiyoko Nagai, Toshihiro Sekigawa, Sadafumi Yoshida, Tomoyuki Tanaka, Kazuo Arai

Keywords:

Hydrogen Annealing, Interface States (or Traps), MOS

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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