Effect of Post-oxidation-annealing in Hydrogen on SiO2/4H-SiC Interface

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Periodical:

Materials Science Forum (Volumes 338-342)

Edited by:

Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer

Pages:

1073-1076

DOI:

10.4028/www.scientific.net/MSF.338-342.1073

Citation:

S. Suzuki et al., "Effect of Post-oxidation-annealing in Hydrogen on SiO2/4H-SiC Interface", Materials Science Forum, Vols. 338-342, pp. 1073-1076, 2000

Online since:

May 2000

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$35.00

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