Reliability and Degradation of Metal-Oxide-Semiconductor Capacitors on 4H- and 6H-Silicon Carbide

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Periodical:

Materials Science Forum (Volumes 338-342)

Edited by:

Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer

Pages:

1089-1092

DOI:

10.4028/www.scientific.net/MSF.338-342.1089

Citation:

M. Treu et al., "Reliability and Degradation of Metal-Oxide-Semiconductor Capacitors on 4H- and 6H-Silicon Carbide", Materials Science Forum, Vols. 338-342, pp. 1089-1092, 2000

Online since:

May 2000

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