Paper Titles

Effect of Post-oxidation-annealing in Hydrogen on SiO₂/4H-SiC Interface
p.1073

Process Dependence of Inversion Layer Mobility in 4H-SiC Devices
p.1077

Controlled Thermal Oxidation of Sacrificial Silicon on 4H-SiC Epilayer
p.1081

Ozone Treament of SiC for Improved Performance of Gas Sensitive Schottky Diodes
p.1085

Reliability and Degradation of Metal-Oxide-Semiconductor Capacitors on 4H- and 6H-Silicon Carbide
p.1089

SiC Devices with ONO Stacked Dielectrics
p.1093

The Effect of Si:C Source Ratio on SiO₂/SiC Interface State Density for Nitrogen Doped 4H and 6H-SiC
p.1097

Channel Doped SiC-MOSFETs
p.1101

Anisotropy of Inversion Channel Mobility in 4H- and 6H-SiC MOSFETs on (11-20) Face
p.1105

HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Reliability and Degradation of...

Reliability and Degradation of Metal-Oxide-Semiconductor Capacitors on 4H- and 6H-Silicon Carbide

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials - 1999

Info:

Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1089-1092

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1089

Citation:

Cite this paper

Online since:

May 2000

Authors:

Michael Treu, Reinhold Schörner, Peter Friedrichs, Roland Rupp, A. Wiedenhofer, Dietrich Stephani, Heiner Ryssel

Keywords:

Charge Trapping, Degradation, MOS, Reliability

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2000 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: