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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342The Effect of Si:C Source Ratio on SiO2/SiC...

The Effect of Si:C Source Ratio on SiO₂/SiC Interface State Density for Nitrogen Doped 4H and 6H-SiC

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1097-1100

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1097

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Online since:

May 2000

Authors:

G.Y. Chung, Chin Che Tin, J.H. Won, John R. Williams

Keywords:

Interface States (or Traps), Polytype, Re-Oxidation Anneal, Si/C Ratio, SiO₂/SiC Interface

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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