The Effect of Si:C Source Ratio on SiO2/SiC Interface State Density for Nitrogen Doped 4H and 6H-SiC

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Periodical:

Materials Science Forum (Volumes 338-342)

Edited by:

Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer

Pages:

1097-1100

DOI:

10.4028/www.scientific.net/MSF.338-342.1097

Citation:

G.Y. Chung et al., "The Effect of Si:C Source Ratio on SiO2/SiC Interface State Density for Nitrogen Doped 4H and 6H-SiC", Materials Science Forum, Vols. 338-342, pp. 1097-1100, 2000

Online since:

May 2000

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$35.00

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