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Electrically Active Traps at the 4H-SiC/SiO₂ Interface Responsible for the Limitation of the Channel Mobility
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Anomalously High Density of Interface States Near the Conduction Band in SiO₂/4H-SiC MOS Devices
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Effect of Post-oxidation-annealing in Hydrogen on SiO₂/4H-SiC Interface
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Process Dependence of Inversion Layer Mobility in 4H-SiC Devices
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Controlled Thermal Oxidation of Sacrificial Silicon on 4H-SiC Epilayer
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Ozone Treament of SiC for Improved Performance of Gas Sensitive Schottky Diodes
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Reliability and Degradation of Metal-Oxide-Semiconductor Capacitors on 4H- and 6H-Silicon Carbide
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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Process Dependence of Inversion Layer Mobility in...

Process Dependence of Inversion Layer Mobility in 4H-SiC Devices

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1077-1080

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1077

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Online since:

May 2000

Authors:

Dev Alok, Emil Arnold, Richard Egloff

Keywords:

Field-Effect Mobility, Interface States (or Traps), Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), Process

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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