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Interface Trap Profiles Near the Band Edges in 6H-SiC MOSFETs
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Mobility in 6H-SiC n-Channel MOSFETs
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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Characterization of SiC MOS Structures using...

Characterization of SiC MOS Structures using Conductance Spectroscopy and Capacitance Voltage Analysis

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1117-1120

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1117

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Online since:

May 2000

Authors:

E.Ö. Sveinbjörnsson, M. Ahnoff, H.Ö. Ólafsson

Keywords:

Conductance Spectroscopy, CV Analysis, Interface States (or Traps), Re-Oxidation

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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