Paper Titles

Characterization of SiC MOS Structures using Conductance Spectroscopy and Capacitance Voltage Analysis
p.1117

Mobility in 6H-SiC n-Channel MOSFETs
p.1121

Effects of Oxidation Conditions on the Concentration of Carbon Dangling Bonds in Oxidized 6H-SiC
p.1125

Effects of Steam Annealing on Electrical Characteristics of 3C-SiC Metal-Oxide-Semiconductor Structures
p.1129

Atomic-Scale Engineering of the SiC-SiO₂ Interface
p.1133

Comparison of High-Temperature Electrcial Characterizations of Pulsed-Laser Deposited AIN on 6H- and 4H-SiC from 25 to 450°C
p.1137

Molding-based Thin Film Patterning Techniques for SiC Surface Micromachining
p.1141

Bulk Micromachining of Polycrystalline SiC Using Si Molds Fabricated by Deep Reactive Ion Etching
p.1145

Preliminary Investigation of SiC on Silicon for Biomedical Applications
p.1149

HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Atomic-Scale Engineering of the SiC-SiO2 Interface

Atomic-Scale Engineering of the SiC-SiO₂ Interface

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials - 1999

Info:

Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1133-1136

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1133

Citation:

Cite this paper

Online since:

May 2000

Authors:

Sokrates T. Pantelides, G. Duscher, M. Di Ventra, Ryszard Buczko, K. McDonald, M.B. Huang, Robert A. Weller, Israel J.R. Baumvol, Fernanda Chiarello Stedile, C. Radtke, S.J. Pennycook, G.Y. Chung, Chin Che Tin, John R. Williams, J.H. Won, Leonard C. Feldman

Keywords:

Interface States (or Traps), Interface Structure, Nitrogen, Oxidation

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2000 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: