Effects of Steam Annealing on Electrical Characteristics of 3C-SiC Metal-Oxide-Semiconductor Structures
p.1129
p.1129
Atomic-Scale Engineering of the SiC-SiO2 Interface
p.1133
p.1133
Comparison of High-Temperature Electrcial Characterizations of Pulsed-Laser Deposited AIN on 6H- and 4H-SiC from 25 to 450°C
p.1137
p.1137
Molding-based Thin Film Patterning Techniques for SiC Surface Micromachining
p.1141
p.1141
Bulk Micromachining of Polycrystalline SiC Using Si Molds Fabricated by Deep Reactive Ion Etching
p.1145
p.1145
Preliminary Investigation of SiC on Silicon for Biomedical Applications
p.1149
p.1149
SiC and GaN High-Voltage Power Switching Devices
p.1155
p.1155
Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices
p.1161
p.1161
Performance and Reliability Issues of SiC-Schottky Diodes
p.1167
p.1167
Bulk Micromachining of Polycrystalline SiC Using Si Molds Fabricated by Deep Reactive Ion Etching
Abstract:
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Periodical:
Materials Science Forum (Volumes 338-342)
Pages:
1145-1148
Citation:
Online since:
May 2000
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© 2000 Trans Tech Publications Ltd. All Rights Reserved
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