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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Influence of Epitaxial Growth and Substrate...

Influence of Epitaxial Growth and Substrate Induced Defects on the Breakdown of High-voltage 4H-SiC Schottky Diodes

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1175-1178

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1175

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Online since:

May 2000

Authors:

Qamar-ul Wahab, Alexsandre Ellison, Christer Hallin, Anne Henry, J. Di Persio, R. Martinez, Erik Janzén

Keywords:

Dislocation, Epitaxial Defects, Schottky Diode

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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