Influence of Epitaxial Growth and Substrate Induced Defects on the Breakdown of High-voltage 4H-SiC Schottky Diodes

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Periodical:

Materials Science Forum (Volumes 338-342)

Edited by:

Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer

Pages:

1175-1178

DOI:

10.4028/www.scientific.net/MSF.338-342.1175

Citation:

Q. Wahab et al., "Influence of Epitaxial Growth and Substrate Induced Defects on the Breakdown of High-voltage 4H-SiC Schottky Diodes", Materials Science Forum, Vols. 338-342, pp. 1175-1178, 2000

Online since:

May 2000

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