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3.6 kV 4H-SiC JBS Diodes with Low RonS
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Fabrication and Testing of 1,000V-60A 4H-SiC MPS Diodes in an Inductive Half-Bridge Circuit
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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Fabrication and Testing of 1,000V-60A 4H-SiC MPS...

Fabrication and Testing of 1,000V-60A 4H-SiC MPS Diodes in an Inductive Half-Bridge Circuit

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1187-1190

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1187

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Online since:

May 2000

Authors:

Kiyoshi Tone, Jian Hui Zhao, M. Weiner, M. Pan

Keywords:

Inductive Half-Bridge Switching, MPS Diode, Power Diodes

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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