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Schottky Barrier Characteristics of 3C-SiC Epilayers Grown by Low Pressure Chemical Vapor Deposition
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Characterization of Au Schottky Contacts on p-Type 3C-SiC Gown by Low Pressure Chemical Vapor Deposition
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Static and Dynamic Characteristics of 4H-SiC JFETs Designed for Different Blocking Categories
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Power Density Comparison between Microwave Power MESFET's Processed on Conductive and Semi-Insulating Wafer
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Surface Induced Instabilities in 4H-SiC Microwave MESFETs
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Characterization of SiC MESFETs on Conducting Substrates
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Fabrication, Characterization, and Modeling of SiC MESFETs
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Physical Simulations on the Operation of 4H-SiC Microwave Power Transistors
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Properties of Transmission Lines on Various SiC Substrates
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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Surface Induced Instabilities in 4H-SiC Microwave...

Surface Induced Instabilities in 4H-SiC Microwave MESFETs

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1251-1254

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1251

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Online since:

May 2000

Authors:

Keith P. Hilton, Michael J. Uren, D.G. Hayes, P.J. Wilding, H.K. Johnson, J.J. Guest, B.H. Smith

Keywords:

MESFET, Microwave Power, Surface Traps

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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