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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Characterization of Au Schottky Contacts on p-Type...

Characterization of Au Schottky Contacts on p-Type 3C-SiC Gown by Low Pressure Chemical Vapor Deposition

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1239-1242

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1239

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Online since:

May 2000

Authors:

Kazutoshi Kojima, Masahito Yoshikawa, Takeshi Ohshima, Hisayoshi Itoh, Sohei Okada

Keywords:

3C-SiC, Low Pressure CVD, p-Type, Schottky Barrier Height SBH, Schottky Contact

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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