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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Characterization of SiC MESFETs on Conducting...

Characterization of SiC MESFETs on Conducting Substrates

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1255-1258

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1255

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Online since:

May 2000

Authors:

Per Åke Nilsson, A.M. Saroukhan, J.O. Svedberg, Andrey O. Konstantinov, S. Karlsson, C. Adås, U. Gustafsson, Chris I. Harris, Niklas Rorsman, Joakim Eriksson, Herbert Zirath

Keywords:

Capacitive Loss, f_max, f_t, MESFET

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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