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High Temperature, High Current, 4H-SiC Accu-DMOSFET
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Nitrogen vs. Phophorus as Implant Species for High-Voltage Lateral RESURF MOSFETs on 4H-SiC
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Effect of Off-Angle from Si (0001) Surface and Polytype on Surface Morphology of SiC and C-V Characteristics of SiC MOS Structures
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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342High Temperature, High Current, 4H-SiC...

High Temperature, High Current, 4H-SiC Accu-DMOSFET

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1271-1274

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1271

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Online since:

May 2000

Authors:

Ranbir Singh, Sei Hyung Ryu, John W. Palmour

Keywords:

Accumulation Layer, High Power, High-Temperature, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET)

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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