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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Nitrogen vs. Phophorus as Implant Species for...

Nitrogen vs. Phophorus as Implant Species for High-Voltage Lateral RESURF MOSFETs on 4H-SiC

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1279-1282

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1279

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Online since:

May 2000

Authors:

K. Chatty, S. Banerjee, T. Paul Chow, Ronald J. Gutmann

Keywords:

4H-SiC, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), Nitrogen, Phosphorus, RESURF

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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