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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Rugged Power MOSFETs in 6H-SiC with Blocking...

Rugged Power MOSFETs in 6H-SiC with Blocking Capability up to 1800V

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1295-1298

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1295

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Online since:

May 2000

Authors:

Reinhold Schörner, Peter Friedrichs, Dethard Peters, Heinz Mitlehner, Benno Weis, Dietrich Stephani

Keywords:

Avalanche Breakdown, Power MOSFET, Switching Characteristics

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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