Paper Titles

Rugged Power MOSFETs in 6H-SiC with Blocking Capability up to 1800V
p.1295

Influence of Post-Oxidation Annealing on Electrical Characteristics in 6H-SiC MOSFETs
p.1299

Effect of Boron Implantation on 6H-SiC N-MOSFET Interface Properties
p.1303

Investigation of Lateral RESURF, 6H-SiC MOSFETs
p.1307

Highly Durable SiC nMISFET's at 450°C
p.1311

SiC MISFETs with MBE-grown AlN Gate Dielectric
p.1315

Steady-State and Transient Forward Current-Voltage Characteristics of 5.5 kV 4H-Silicon Carbide Diodes at High and Superhigh Current Densities
p.1319

Current Voltage Characteristics of High-Voltage 4H Silicon Carbide Diodes
p.1323

Dynamic Avalanche and Trapped Charge in 4H-SiC Diodes
p.1327

HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Highly Durable SiC nMISFET's at 450°C

Highly Durable SiC nMISFET's at 450°C

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials - 1999

Info:

Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1311-1314

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1311

Citation:

Cite this paper

Online since:

May 2000

Authors:

W.J. Zhu, Xie Wen Wang, T.P. Ma, Jesse B. Tucker, Mulpuri V. Rao

Keywords:

High Temperature Electronics, Jet Vapor Deposition, ONO Dielectric, Reliability

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2000 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: