Paper Titles

Investigation of Lateral RESURF, 6H-SiC MOSFETs
p.1307

Highly Durable SiC nMISFET's at 450°C
p.1311

SiC MISFETs with MBE-grown AlN Gate Dielectric
p.1315

Steady-State and Transient Forward Current-Voltage Characteristics of 5.5 kV 4H-Silicon Carbide Diodes at High and Superhigh Current Densities
p.1319

Current Voltage Characteristics of High-Voltage 4H Silicon Carbide Diodes
p.1323

Dynamic Avalanche and Trapped Charge in 4H-SiC Diodes
p.1327

Comparison of Nitrogen and Phosphorus Implanted, Planar, High-Voltage 4H-SiC Junction Rectifiers
p.1331

Dynamic and Steady-State Description of Incomplete Ionization in 4H-SiC Power Diodes under Turn-Off
p.1335

Simulation and Fabrication of High-Voltage 4H-SiC Diodes with Multiple Floating Guard Ring Termination
p.1339

HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Current Voltage Characteristics of High-Voltage 4H...

Current Voltage Characteristics of High-Voltage 4H Silicon Carbide Diodes

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials - 1999

Info:

Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1323-1326

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1323

Citation:

Cite this paper

Online since:

May 2000

Authors:

Uwe Zimmermann, Anders Hallén, Bo Breitholtz

Keywords:

Contact Resistance, Electroluminescence, Excess Current, High Voltage (HV), I-V Characteristic, Junction Barrier Schottky (JBS) Diode, Leakage Current, pn Diodes, Schottky, Shunt, TLM

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2000 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: