Paper Titles

SiC MISFETs with MBE-grown AlN Gate Dielectric
p.1315

Steady-State and Transient Forward Current-Voltage Characteristics of 5.5 kV 4H-Silicon Carbide Diodes at High and Superhigh Current Densities
p.1319

Current Voltage Characteristics of High-Voltage 4H Silicon Carbide Diodes
p.1323

Dynamic Avalanche and Trapped Charge in 4H-SiC Diodes
p.1327

Comparison of Nitrogen and Phosphorus Implanted, Planar, High-Voltage 4H-SiC Junction Rectifiers
p.1331

Dynamic and Steady-State Description of Incomplete Ionization in 4H-SiC Power Diodes under Turn-Off
p.1335

Simulation and Fabrication of High-Voltage 4H-SiC Diodes with Multiple Floating Guard Ring Termination
p.1339

Transient Characterization of SiC P-N Diode
p.1343

Formation of Deep pn Junctions by MeV Al- and B-ion Implantations into 4H-SiC and Reverse Characteristics
p.1347

HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Comparison of Nitrogen and Phosphorus Implanted,...

Comparison of Nitrogen and Phosphorus Implanted, Planar, High-Voltage 4H-SiC Junction Rectifiers

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1331-1334

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1331

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Online since:

May 2000

Authors:

K. Chatty, V. Khemka, T. Paul Chow, Ronald J. Gutmann

Keywords:

4H-SiC, Diode, Junction Rectifiers, Nitrogen, Phosphorus

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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