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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Steady-State and Transient Forward Current-Voltage...

Steady-State and Transient Forward Current-Voltage Characteristics of 5.5 kV 4H-Silicon Carbide Diodes at High and Superhigh Current Densities

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1319-1322

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1319

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Online since:

May 2000

Authors:

N.V. Dyakonova, Pavel A. Ivanov, V.A. Kozlov, Michael E. Levinshtein, John W. Palmour, Sergey L. Rumyantsev, Ranbir Singh

Keywords:

Diffusion Length, Emitter Injection Coefficient, Lifetime, Rectifier diode

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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