Steady-State and Transient Forward Current-Voltage Characteristics of 5.5 kV 4H-Silicon Carbide Diodes at High and Superhigh Current Densities

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Periodical:

Materials Science Forum (Volumes 338-342)

Edited by:

Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer

Pages:

1319-1322

DOI:

10.4028/www.scientific.net/MSF.338-342.1319

Citation:

N.V. Dyakonova et al., "Steady-State and Transient Forward Current-Voltage Characteristics of 5.5 kV 4H-Silicon Carbide Diodes at High and Superhigh Current Densities", Materials Science Forum, Vols. 338-342, pp. 1319-1322, 2000

Online since:

May 2000

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