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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Investigation of Lateral RESURF, 6H-SiC MOSFETs

Investigation of Lateral RESURF, 6H-SiC MOSFETs

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1307-1310

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1307

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Online since:

May 2000

Authors:

Anant K. Agarwal, N.S. Saks, S.S. Mani, V.S. Hegde, P.A. Sanger

Keywords:

Interface States (or Traps), LDMOS, Mobility, Power MOSFET, RESURF

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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