Investigation of Lateral RESURF, 6H-SiC MOSFETs

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 338-342)

Edited by:

Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer

Pages:

1307-1310

DOI:

10.4028/www.scientific.net/MSF.338-342.1307

Citation:

A. K. Agarwal et al., "Investigation of Lateral RESURF, 6H-SiC MOSFETs", Materials Science Forum, Vols. 338-342, pp. 1307-1310, 2000

Online since:

May 2000

Export:

Price:

$35.00

In order to see related information, you need to Login.