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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Influence of Post-Oxidation Annealing on...

Influence of Post-Oxidation Annealing on Electrical Characteristics in 6H-SiC MOSFETs

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1299-1302

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1299

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Online since:

May 2000

Authors:

Takeshi Ohshima, Masahito Yoshikawa, Hisayoshi Itoh, Kazutoshi Kojima, Sohei Okada, Isamu Nashiyama

Keywords:

Channel Mobility, Field-Effect Transistor, Metal-Oxide-Semiconductor (MOS), Post-Oxidation Annealing, Threshold Voltage

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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