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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Accumulation-Mode SiC Power MOSFET Design Issues

Accumulation-Mode SiC Power MOSFET Design Issues

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1287-1290

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1287

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Online since:

May 2000

Authors:

Y. Wang, C. Weitzel, M. Bhatnagar

Keywords:

Accumulation Mode, Breakdown Voltage, Edge Termination, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), Simulation

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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