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HomeMaterials Science ForumMaterials Science Forum Vols. 338-3424H-SiC Self-Aligned Implant-Diffused Structure for...

4H-SiC Self-Aligned Implant-Diffused Structure for Power DMOSFETs

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1275-1278

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1275

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Online since:

May 2000

Authors:

A.V. Suvorov, Lori A. Lipkin, G.M. Johnson, Ranbir Singh, John W. Palmour

Keywords:

Diffusion, DMOSFET, Implantation, Power Device

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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