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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Dynamic Avalanche and Trapped Charge in 4H-SiC...

Dynamic Avalanche and Trapped Charge in 4H-SiC Diodes

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1327-1330

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1327

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Online since:

May 2000

Authors:

Martin Domeij, Bo Breitholtz, P. Liberski, A. Martinez, Peder Bergman

Keywords:

Carrier Traps, Dynamic Avalanche, Impact Ionization, Reverse Recovery

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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