Paper Titles

Current Voltage Characteristics of High-Voltage 4H Silicon Carbide Diodes
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Dynamic Avalanche and Trapped Charge in 4H-SiC Diodes
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Comparison of Nitrogen and Phosphorus Implanted, Planar, High-Voltage 4H-SiC Junction Rectifiers
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Dynamic and Steady-State Description of Incomplete Ionization in 4H-SiC Power Diodes under Turn-Off
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Simulation and Fabrication of High-Voltage 4H-SiC Diodes with Multiple Floating Guard Ring Termination
p.1339

Transient Characterization of SiC P-N Diode
p.1343

Formation of Deep pn Junctions by MeV Al- and B-ion Implantations into 4H-SiC and Reverse Characteristics
p.1347

Defect Modeling and Simulation of 4-H SiC P-N Diode
p.1351

6H-SiC Diodes with Cellular Structure to Avoid Micropipe Effects
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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Simulation and Fabrication of High-Voltage 4H-SiC...

Simulation and Fabrication of High-Voltage 4H-SiC Diodes with Multiple Floating Guard Ring Termination

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1339-1342

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1339

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Online since:

May 2000

Authors:

David C. Sheridan, G. Niu, J. Neil Merrett, J.D. Cressler, C. Ellis, Chin Che Tin, R.R. Siergiej

Keywords:

Breakdown Voltage, Diode, Edge Termination, Guard Rings, MEDICI, Simulation

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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