Paper Titles

Dynamic and Steady-State Description of Incomplete Ionization in 4H-SiC Power Diodes under Turn-Off
p.1335

Simulation and Fabrication of High-Voltage 4H-SiC Diodes with Multiple Floating Guard Ring Termination
p.1339

Transient Characterization of SiC P-N Diode
p.1343

Formation of Deep pn Junctions by MeV Al- and B-ion Implantations into 4H-SiC and Reverse Characteristics
p.1347

Defect Modeling and Simulation of 4-H SiC P-N Diode
p.1351

6H-SiC Diodes with Cellular Structure to Avoid Micropipe Effects
p.1355

A Closed-form Analytical Solution of 6H-SiC Punch-through Junction Breakdown Voltages
p.1359

Study of the Breakdown Voltage of Protected or Non-Protected 6H-SiC Bipolar Diodes by OBIC Characterisation
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Al/C/B Co-Implanted High-Voltage 4H-SiC PiN Junction Rectifiers
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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Defect Modeling and Simulation of 4-H SiC P-N...

Defect Modeling and Simulation of 4-H SiC P-N Diode

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1351-1354

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1351

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Online since:

May 2000

Authors:

N. Keskar, K. Shenai, Philip G. Neudeck

Keywords:

2D Simulation, ''Defect'' Diode, Forward I-V Characteristics, Modeling, p-n Diodes

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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