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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Al/C/B Co-Implanted High-Voltage 4H-SiC PiN...

Al/C/B Co-Implanted High-Voltage 4H-SiC PiN Junction Rectifiers

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1367-1370

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1367

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Online since:

May 2000

Authors:

Jeffery B. Fedison, Z. Li, V. Khemka, Nudjarin Ramungul, T. Paul Chow, Mario Ghezzo, James W. Kretchmer, Ahmed Elasser

Keywords:

High Voltage Power Device, High-Level Lifetime, Pin Rectifier, Reverse Recovery

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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