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HomeMaterials Science ForumMaterials Science Forum Vols. 338-3426.2KV 4H-SiC pin Diode with Low Forward Voltage...

6.2KV 4H-SiC pin Diode with Low Forward Voltage Drop

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1371-1374

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1371

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Online since:

May 2000

Authors:

Yoshitaka Sugawara, Katsunori Asano, Ranbir Singh, John W. Palmour

Keywords:

High Blocking Voltage, Mesa JTE, Reverse Recovery Time, SiC PiN Diode, V_F

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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