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Defect Modeling and Simulation of 4-H SiC P-N Diode
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6H-SiC Diodes with Cellular Structure to Avoid Micropipe Effects
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A Closed-form Analytical Solution of 6H-SiC Punch-through Junction Breakdown Voltages
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Study of the Breakdown Voltage of Protected or Non-Protected 6H-SiC Bipolar Diodes by OBIC Characterisation
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Al/C/B Co-Implanted High-Voltage 4H-SiC PiN Junction Rectifiers
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6.2KV 4H-SiC pin Diode with Low Forward Voltage Drop
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Monte Carlo Simulation of 4H-SiC IMPATT Diodes
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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Study of the Breakdown Voltage of Protected or...

Study of the Breakdown Voltage of Protected or Non-Protected 6H-SiC Bipolar Diodes by OBIC Characterisation

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1363-1366

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1363

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Online since:

May 2000

Authors:

K. Isoird, Laurent Ottaviani, Marie Laure Locatelli, Dominique Planson, Christophe Raynaud, Pascal Bevilacqua, Jean-Pierre Chante

Keywords:

Breakdown Voltage, Diode, Junction Termination Extension (JTE), OBIC, Peripheral Protection

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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