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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Theoretical and Experimental Study of 4H-SiC...

Theoretical and Experimental Study of 4H-SiC Junction Edge Termination

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1375-1378

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1375

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Online since:

May 2000

Authors:

Xue Qing Li, Kiyoshi Tone, Li Hui Cao, Peter Alexandrov, Leonid Fursin, Jian Hui Zhao

Keywords:

Diode, Epitaxial Guard Ring, GTOs, Modified Junction Termination Extension

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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