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Theoretical and Experimental Study of 4H-SiC Junction Edge Termination
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Monte Carlo Simulation of 4H-SiC IMPATT Diodes
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Demonstration of High Performance Visible-blind 4H-SiC Avalanche Photodiodes
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2600 V, 12 A, 4H-SiC, Asymmetrical Gate Turn Off (GTO) Thyristor Development
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Factors Influencing the Design and Performance of 4H-SiC GTO Thyristors
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4H-SiC Gate Turn-Off Thyristor Designs for Very High Power Control
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Fabrication and Characterization of 4H-SiC GTOs and Diodes
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HomeMaterials Science ForumMaterials Science Forum Vols. 338-3422600 V, 12 A, 4H-SiC, Asymmetrical Gate Turn Off...

2600 V, 12 A, 4H-SiC, Asymmetrical Gate Turn Off (GTO) Thyristor Development

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1387-1390

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1387

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Online since:

May 2000

Authors:

Anant K. Agarwal, Sei Hyung Ryu, Ranbir Singh, Olof Kordina, John W. Palmour

Keywords:

GTOs, High-Temperature, Junction Termination Extension (JTE), Power Device, Switch, Thyristor

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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