2600 V, 12 A, 4H-SiC, Asymmetrical Gate Turn Off (GTO) Thyristor Development

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Periodical:

Materials Science Forum (Volumes 338-342)

Edited by:

Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer

Pages:

1387-1390

DOI:

10.4028/www.scientific.net/MSF.338-342.1387

Citation:

A. K. Agarwal et al., "2600 V, 12 A, 4H-SiC, Asymmetrical Gate Turn Off (GTO) Thyristor Development", Materials Science Forum, Vols. 338-342, pp. 1387-1390, 2000

Online since:

May 2000

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$35.00

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