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Monte Carlo Simulation of 4H-SiC IMPATT Diodes
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Demonstration of High Performance Visible-blind 4H-SiC Avalanche Photodiodes
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2600 V, 12 A, 4H-SiC, Asymmetrical Gate Turn Off (GTO) Thyristor Development
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Factors Influencing the Design and Performance of 4H-SiC GTO Thyristors
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4H-SiC Gate Turn-Off Thyristor Designs for Very High Power Control
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Fabrication and Characterization of 4H-SiC GTOs and Diodes
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100 kHz Operation of SiC Junction Controlled Thyristor (JCT) Switches used in an All-SiC PWM Inverter
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SiC-Power Rectifiers
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Comparison of 5 kV 4H-SiC N-Channel and P-Channel IGBTs
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HomeMaterials Science ForumMaterials Science Forum Vols. 338-3424H-SiC Gate Turn-Off Thyristor Designs for Very...

4H-SiC Gate Turn-Off Thyristor Designs for Very High Power Control

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1395-1398

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1395

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Online since:

May 2000

Authors:

Pankaj B. Shah, Bruce Geil, Kenneth A. Jones, T.E. Griffin, Michael A. Derenge

Keywords:

Gate Turn-Off Thyristor, Power Conditioning

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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