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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Comparison of 5 kV 4H-SiC N-Channel and P-Channel...

Comparison of 5 kV 4H-SiC N-Channel and P-Channel IGBTs

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1411-1414

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1411

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Online since:

May 2000

Authors:

Jue Wang, B.W. Williams, Shankar E. Madathil, M.M. Desouza

Keywords:

Incomplete Ionization, SiC N-Channel IGBT, SiC P-Channel IGBT

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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