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100 kHz Operation of SiC Junction Controlled Thyristor (JCT) Switches used in an All-SiC PWM Inverter
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SiC-Power Rectifiers
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Comparison of 5 kV 4H-SiC N-Channel and P-Channel IGBTs
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Design and Simulations of 5000V MOS-Gated Bipolar Transistor (MGT) on 4H-SiC
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TCAD Evaluation of Double Implanted 4H-SiC Power Bipolar Transistors
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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342SiC-Power Rectifiers

SiC-Power Rectifiers

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1407-1410

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1407

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Online since:

May 2000

Authors:

R. Held, M. Füllmann, E. Niemann

Keywords:

Rectifier, Schottky Diode, SiC Power Devices, Switching

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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