Fabrication and Characterization of 4H-SiC GTOs and Diodes
p.1399
p.1399
100 kHz Operation of SiC Junction Controlled Thyristor (JCT) Switches used in an All-SiC PWM Inverter
p.1403
p.1403
SiC-Power Rectifiers
p.1407
p.1407
Comparison of 5 kV 4H-SiC N-Channel and P-Channel IGBTs
p.1411
p.1411
Design and Simulations of 5000V MOS-Gated Bipolar Transistor (MGT) on 4H-SiC
p.1415
p.1415
TCAD Evaluation of Double Implanted 4H-SiC Power Bipolar Transistors
p.1419
p.1419
Operation of a 2500V 150A Si-IGBT / SiC Diode Module
p.1423
p.1423
High-Power P-Channel UMOS IGBT's in 6H-SiC for High Temperature Operation
p.1427
p.1427
High Temperature 4H-SiC FET for Gas Sensing Applications
p.1431
p.1431
Design and Simulations of 5000V MOS-Gated Bipolar Transistor (MGT) on 4H-SiC
Abstract:
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Periodical:
Materials Science Forum (Volumes 338-342)
Pages:
1415-1418
Citation:
Online since:
May 2000
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© 2000 Trans Tech Publications Ltd. All Rights Reserved
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