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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342High Temperature 4H-SiC FET for Gas Sensing...

High Temperature 4H-SiC FET for Gas Sensing Applications

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1431-1434

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1431

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Online since:

May 2000

Authors:

Susan Savage, Andrey O. Konstantinov, A.M. Saroukhan, Chris I. Harris

Keywords:

Device Function, Gas Sensor, High-Temperature, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET)

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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