Paper Titles

High Temperature 4H-SiC FET for Gas Sensing Applications
p.1431

High Temperature Gas Sensors Based on Catalytic Metal Field Effect Transistors
p.1435

SiC-Based Gas Sensor Development
p.1439

Fabrication of SiC Hydrogen Sensor by Pd-Implantation
p.1443

Epitaxial 6H-SiC Layers as Detectors of Nuclear Particles
p.1447

GaN Quantum Dots on Sapphire and Si Substrates
p.1453

Achievement of MBE-Grown GaN Heteroepitaxial Layer with (0001) Ga-Polarity and Improved Quality by In Exposure
p.1459

Crack-Free, Single-Crystal GaN Grown on 100 mm Diameter Silicon
p.1463

3C-SiC Pseudosubstrates for the Growth of Cubic GaN
p.1467

HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Epitaxial 6H-SiC Layers as Detectors of Nuclear...

Epitaxial 6H-SiC Layers as Detectors of Nuclear Particles

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials - 1999

Info:

Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1447-1452

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1447

Citation:

Cite this paper

Online since:

May 2000

Authors:

Alexander A. Lebedev, N.S. Savkina, M. Kajita, Nikita B. Strokan, D.V. Davydov

Keywords:

Alpha Particles Spectroscopy, Amplitude Spectrum, Diffusion Length, Energy of Electron-Hole Pair Formation, Nonuniformity of Lifetime, Sublimation Epitaxy

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2000 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: