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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342GaN Quantum Dots on Sapphire and Si Substrates

GaN Quantum Dots on Sapphire and Si Substrates

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1453-1458

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1453

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Online since:

May 2000

Authors:

Hadis Morkoç, M.A. Reshchikov, A.A. Baski, M.I. Nathan

Keywords:

Molecular Beam Epitaxy, Photoluminescence (PL), Polarisation, Quantum Dot (QD), Stark Effect

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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