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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Achievement of MBE-Grown GaN Heteroepitaxial Layer...

Achievement of MBE-Grown GaN Heteroepitaxial Layer with (0001) Ga-Polarity and Improved Quality by In Exposure

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1459-1462

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1459

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Online since:

May 2000

Authors:

Toshihide Ide, Mitsuaki Shimizu, Xu-Qiang Shen, Shinji Hara, Hajime Okumura, Toshio Nemoto

Keywords:

CAICISS, Gallium Nitride (GaN), In Exposure, MBE, Polarity

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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